ROHM launches wide SOA M<span style='color:red'>OS</span>FET for AI servers in compact 5×6mm package
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ROHM launches wide SOA MOSFET for AI servers in compact 5×6mm package

　　ROHM has developed the 100V power MOSFET - RS7P200BM - achieving industry-leading SOA in a 5060-size (5.0mm × 6.0mm) package. This product is ideal for hot-swap circuits in AI servers using 48V power supplies as well as for industrial power supplies requiring battery protection.　　The rapid evolution and widespread adoption of AI technologies have increased the demand for stable operation and improved power efficiency in servers equipped with generative AI and high-performance GPUs. Particularly in hot-swap circuits, power MOSFETs with wide SOA are essential to handle inrush current and overload conditions, ensuring stable operation. Furthermore, within data centers and AI servers, the transition towards 48V power supplies, which offer superior power conversion efficiency, is progressing against a backdrop of energy conservation. This necessitates the development of high-voltage, high-efficiency power supply circuits capable of meeting these demands.　　Therefore, ROHM has expanded its line-up of 100V power MOSFETs ideal for hot-swap circuits in AI servers to meet market demand. The new RS7P200BM adopts a compact DFN5060-8S (5060 size) package, enabling even higher density mounting compared to the AI server power MOSFET ‘RY7P250BM’ in the DFN8080-8S (8.0mm × 8.0mm size) package, which ROHM has released in May 2025.　　The new product achieves a low on-resistance (RDS(on)) of 4.0mΩ (conditions: VGS=10V, ID=50A, Ta=25°C) while maintaining wide SOA of 7.5A at a pulse width of 10ms and 25A at 1ms under operating conditions of VDS=48V. This balance of low on-resistance and wide SOA, typically a trade-off relationship, helps suppress heat generation during operation, thereby improving server power supply efficiency, reducing cooling load, and lowering electricity costs.　　Mass production of the new product began in September 2025 (sample price: $5.5/unit, excluding tax).　　ROHM will continue to expand its product lineup for 48V power supplies, which are increasingly adopted in applications such as AI servers. By providing highly efficient and reliable solutions, we will contribute to reducing power loss and cooling loads in data centers, as well as enhancing the high reliability and energy efficiency of server systems.　　Application Examples　　•48V system AI servers and data center power hot-swap circuits　　•48V system industrial power supplies (forklifts, power tools, robots, fan motors, etc.)　　•Battery-powered industrial equipment such as AGVs (Automated Guided Vehicles)　　•UPS, emergency power systems (battery backup units)　　EcoMOS™ Brand　　EcoMOS™ is ROHM's brand of silicon power MOSFETs designed for energy-efficient applications in the power device sector. Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.　　・EcoMOS™ is a trademark or registered trademark of ROHM Co., Ltd.　　Terminology　　SOA(Safe Operating Area)　　The voltage and current range within which a device can operate safely without damage. Operation beyond this safe operating area may cause thermal runaway or damage; therefore, consideration of the SOA is essential, particularly in applications where inrush current or overcurrent may occur.　　Hot-swap circuit　　The complete circuitry supports the hot-swap function, which enables the removal or insertion of components while the device's power supply remains active. Comprising MOSFETs, protective elements, and connectors, it suppresses inrush currents occurring during component insertion and provides overcurrent protection, thereby ensuring the safe operation of the system and connected components.　　Inrush Current　　The high current exceeds the rated current value that flows momentarily when switching on electronic equipment. Controlling this prevents damage to devices and stabilizes the system by reducing the load on components within the power supply circuit.　　On-resistance(RDS(on))　　The resistance value between the drain and source terminals when the MOSFET is in operation (on). The lower the value, the less power loss occurs during operation.
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Release time：2025-11-28 17:28 reading：290 Continue reading>>
Panasonic Industry Commercializes Conductive Polymer Tantalum Solid Capacitors (P<span style='color:red'>OS</span>CAP) with The Industry's Lowest Profile*1 to Support High-Output Power Delivery Required for USB Type-C Connections
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Panasonic Industry Commercializes Conductive Polymer Tantalum Solid Capacitors (POSCAP) with The Industry's Lowest Profile*1 to Support High-Output Power Delivery Required for USB Type-C Connections

　　Panasonic Industry Co., Ltd., a Panasonic Group company, announced  that it will begin commercial production of its two models of Conductive Polymer Tantalum Solid Capacitors (POSCAP), 50TQT33M and 63TQT22M. These capacitors are incorporated into power circuits used for information and communication equipment, including laptops and tablets. They offer an ultra-high withstand voltage and high capacitance in a body with the industry’s lowest profile of 3 mm, supporting high-output power delivery through USB Type-C connectors. Mass production for these models is planned to start in December 2025.　　These capacitors are ideal for voltage stabilization and noise reduction in power supplies compliant with USB Power Delivery (USB-PD)[1] 3.1. While previous USB-C connectors supplied up to 100 W (20 V/5 A), USB-PD 3.1 expands this to 240 W (48 V/5 A). This enables widespread use of USB-C connectors for high-speed data transfer and rapid charging, and is expected to further expand applications to larger equipment requiring high power output, such as displays.　　On the other hand, information and communication equipment such as laptops are increasingly required to be thinner and more compact. Capacitors therefore must combine an ultra-high withstand voltage, high capacitance, and a low profile in order to fit into limited space. Panasonic Industry began mass production of Conductive Polymer Tantalum Solid Capacitors (POSCAP) in 1997 and, as an industry leader, has continuously delivered first-of-their-kind products. Leveraging proprietary powder molding technology and film formation technologies, the company has newly developed two models that achieve both an ultra-high withstand voltage and high capacitance in a package with the industry's lowest profile of 3 mm.　　Through these unique device technologies, Panasonic Industry will continue to contribute to enhancing the functionality of electronic equipment, including laptops, while also reducing the environmental impact through smaller, lighter devices and lower material usage.　　Key features:　　1. Achieves both an ultra-high withstand voltage and high capacitance*2 to support high-output USB Type-C power delivery, in a 3 mm profile—the lowest in the industry*1—enabled by proprietary powder molding and film formation technologies　　2. Lineup of USB-PD 3.1-compliant models rated at 50 V and 63 V　　3. Contributes to reduced material usage lower environmental impact through low-profile design　　*1 As of September 18, 2025, Conductive polymer tantalum solid capacitors with rated voltages of 50 V and 63 V and capacitance of 22 μF or higher (Panasonic Industry data)　　*2 USB-Power Delivery 3.1 (180 W/240 W output) compliant high-capacitance conductive polymer tantalum solid capacitors with rated voltages of 50 V and 63 V, and a capacitance of 22 μF or higherDetailed features:　　1. Achieves both an ultra-high withstand voltage and high capacitance to support high-output USB Type-C power delivery, in a 3 mm profile—the lowest in the industry—enabled by proprietary powder molding and film formation technologies　　To achieve capacitor performance required for USB-PD 3.1 power supplies in a low-profile body, both high capacitance and a high withstand voltage must be ensured, despite their trade-off relationship. High-capacitance tantalum powder is necessary for electrode materials, but its fine particle size makes molding difficult, creating challenges for stable production. Forming a uniform dielectric film on the surface of the electrodes is important for enhancing the withstand voltage. However, since electrodes made with high-capacitance tantalum powder contain extremely small internal pores, dielectric oxide films tend to develop imperfections.　　Panasonic Industry overcame these challenges by establishing proprietary technology to mold high-capacitance tantalum powder with uniform density, and by optimizing the film deposition process to create flawless dielectric films. This enabled the development of two new models that combine an ultra-high withstand voltage and high capacitance, meeting the USB-C high-output power delivery requirements in a 3 mm low-profile package.Cross-sectional view of POSCAP and enlarged view of the inside of the electrode body　　2. Lineup of USB-PD 3.1-compliant models rated at 50 V and 63 V　　Until now, Panasonic Industry’s POSCAP lineup extended only up to 35 V, with no models compatible with USB-PD 3.1, which extends the rated voltage specification to 36 V (180 W) and 48 V (240 W). The two new models, rated at 50 V and 63 V, each achieve a high capacitance of 22 μF or higher in a package with the industry's lowest profile of 3 mm. The full lineup provides flexibility to meet diverse applications and equipment specifications.　　3. Contributes to reduced material usage lower environmental impact through low-profile design　　Compared to the industry standard size*3, the new models reduce volume by 25%, contributing to a lower environmental impact through reduced material usage.　　*3 Comparison with the industry standard size (7.3 mm × 4.3 mm × 4 mm) of conductive polymer tantalum solid capacitors used in USB-PD 3.1 compliant power suppliesApplications:　　Voltage stabilization and noise reduction of USB-PD 3.1-compliant power supplies for laptops, displays, and peripheral equipment　　Arc discharge[2] countermeasures for USB-PD 3.1-compliant connectors　　Specifications:　　Life: 2,000 hours at 105°C; guaranteed operating temperature range: -55°C to 105°C　　Ripple current[3]: 100 kHz, 105°C　　ESR[4]: 100 kHz, 20°C　　*4 Product dimensional tolerance:　　Length (L): ±0.3 mm; Width (W): ±0.2 mm; Height (H): ±0.2 mmTerm descriptions:　　[1] USB-PD　　The power delivery standards established by the standard-setting organization USB Implementers Forum, Inc. (USB-IF). With the launch of USB-PD 3.1 in 2021, USB Type-C cables and connectors can now deliver up to 240 W of power, supporting a wide range of applications—from smartphones and laptops to larger equipment such as monitors.　　[2] Arc discharge　　An electric spark or discharge phenomenon that occurs when a high current flows at low voltage in electrical circuits.　　[3] Ripple current　　When a voltage fluctuation is applied to a capacitor, a corresponding charging or discharging current flows through the capacitor. The current applied to this capacitor is referred to as a ripple current. The higher the ripple current, the higher the allowable current.　　[4] ESR (Equivalent Series Resistance)　　Represents the value of an internal resistance component that can cause heat generation. Capacitors with lower ESR allow higher ripple currents and provide excellent noise absorption.
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Release time：2025-11-06 15:35 reading：455 Continue reading>>
Driving Innovation Together: NOV<span style='color:red'>OS</span>ENSE, UAES and Innoscience Join Forces to Reshape Power Electronics for New Energy Vehicles
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Driving Innovation Together: NOVOSENSE, UAES and Innoscience Join Forces to Reshape Power Electronics for New Energy Vehicles

　　September 29, 2025 – NOVOSENSE Microelectronics, United Automotive Electronic Systems (UAES) and Innoscience have signed a strategic cooperation agreement to jointly advance power electronics for new energy vehicles (NEVs). The three parties will collaborate on the development of next-generation intelligent integrated Gallium Nitride (GaN) products. Building on their combined expertise, the new devices will deliver more reliable GaN driving and protection features, enabling higher power density and paving the way for commercial adoption across the automotive industry.Signing Ceremony　　GaN as a Key Driver for NEV Innovation　　With its superior material properties, GaN is emerging as a transformative technology in automotive power electronics. Compared to traditional silicon devices, GaN significantly improves system efficiency and power density, allowing for more compact and lighter designs—addressing the core requirements of vehicle electrification and lightweighting.　　Complementary Strengths, Shared Goals　　Through joint R&D and application validation, NOVOSENSE, UAES and Innoscience aim to tackle critical challenges such as efficiency, reliability and cost. Together, the three parties will deliver solutions that combine high performance with competitive economics. NOVOSENSE brings extensive expertise in high-performance analog and mixed-signal IC design. UAES contributes deep knowledge in system integration and automotive applications. Innoscience adds world-leading competence in GaN device technology. This cross-disciplinary collaboration establishes a platform for innovation across the entire value chain, accelerating GaN adoption in next-generation automotive systems.　　Dr. Xiaolu Guo, Deputy General Manager of UAES, said:“UAES has been at the forefront of automotive electronics for decades, consistently responding to industry needs through innovation. GaN technology is a vital enabler for vehicle electrification. Partnering with NOVOSENSE and Innoscience allows us to integrate capabilities from device to system level, driving GaN industrialization and delivering efficient, reliable and cost-effective solutions for our customers.”　　Mr. Shengyang Wang, Founder, Chairman and CEO of NOVOSENSE, commented:“Upgrading the NEV industry requires deep collaboration across the value chain. By combining UAES’s system integration expertise with Innoscience’s GaN leadership and NOVOSENSE’s IC design capabilities, we are creating a powerful synergy. This strategic partnership sets a benchmark for industry collaboration, ensuring both technological breakthroughs and market value creation.”　　Dr. Jingang Wu, CEO of Innoscience, added:“The potential of GaN in automotive power electronics is only beginning to be realized. True impact will come from aligning device innovation with system requirements. We look forward to working closely with NOVOSENSE and UAES to extend the boundaries of GaN applications in automotive electrification and to translate technological advantages into tangible industry benefits.”　　A Step Forward for the Industry　　This strategic cooperation marks a pivotal milestone for all three companies. NOVOSENSE, a leading Chinese automotive semiconductor supplier with nearly one billion automotive ICs shipped, complements UAES’s strong system know-how and Innoscience’s GaN device leadership. Together, the three parties will strengthen the value chain, overcome application bottlenecks, and accelerate the transition of the NEV industry toward higher efficiency and sustainability.
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Release time：2025-10-09 13:53 reading：602 Continue reading>>
NOV<span style='color:red'>OS</span>ENSE launches NSUC1612: Fully Integrated Embedded Motor Drive SoC for Smarter, Cost-Efficient Automotive Actuators
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NOVOSENSE launches NSUC1612: Fully Integrated Embedded Motor Drive SoC for Smarter, Cost-Efficient Automotive Actuators

　　NOVOSENSE has released the NSUC1612, a next-generation motor driver SoC designed to address the limitations of traditional discrete solutions in automotive smart actuators, such as system complexity, high cost, and limited reliability.　　With its fully integrated single-chip architecture, the NSUC1612 can simplify design, reduce cost, and enhance stability. It supports a wide range of applications, including automotive water valves, automotive air-conditioning vent, active grille shutters, as well as stepper motors, DC brushed motors, and DC brushless motors—delivering an efficient and scalable solution for automotive electronics.　　1.Fully Integrated Architecture: Simplified Design, Reduced Complexity　　Conventional actuator control systems often require multiple components, including MCU, motor drivers, communication interfaces, and protection circuits, leading to complex PCB layout, increased solder joints, and compatibility issues.The NSUC1612 integrates a 32-bit ARM® Cortex®-M3 MCU with 4- or 3-channel half-bridge drivers, LIN/CAN controller communication interfaces, a 12-bit ADC, temperature sensors, and other essential modules, all in a single-chip. This eliminates the need for additional companion ICs while covering the full motor control, communication, and protection process.By reducing external components and simplifying hardware design, the NSUC1612 shortens development cycles and minimizes EMI risk through optimized internal signal routing.　　2.Excellent EMC Performance: Reliable Operation in Harsh Environments　　Automotive electronics operate in complex electromagnetic conditions where EMC performance directly impacts actuator precision and system stability. The NSUC1612 provides simplified reference circuits and optimized PCB layout. In compliance with CISPR 25:2021 Class 5, it passes stringent automotive EMC/EMI tests, compliant with the automotive standardsSelected Test Results Based on CISPR 25:2021　　This ensures stable motor control signals and helps prevent malfunctions such as actuator stalls or misoperation caused by electromagnetic interference.　　3.Strong Performance: Balanced Drive Capability and Processing Power　　The NSUC1612 is designed to deliver both reliable motor driving capability and efficient computation: NSUC1612B: 4 half-bridge outputs, peak current up to 500 mA NSUC1612E: 3 half-bridge outputs, peak current up to 2.1 AThese options support brushed DC, BLDC, and stepper motors across diverse applications, from HVAC air vent adjustment to seat ventilation.　　The ARM® Cortex®-M3 core with Harvard architecture integrates 32 KB Flash, 2 KB SRAM, and 15 KB ROM with Bootloader, supporting OTA upgrades. A 32 MHz high-precision oscillator with PLL ensures stable computation, while low-power sleep mode consumes less than 50 μA across the full operation temperature range, balancing performance with energy efficiency.　　4.Automotive-Grade Reliability: Built for Demanding Conditions　　The NSUC1612 is designed with comprehensive reliability features to withstand harsh operating environments. It is compliant with AEC-Q100 Grade 1, supporting junction temperatures up to 150°C and ensuring stable operation across a wide temperature range from -40°C to +125°C. The device’s LIN port can tolerate up to ±40 V, while the BVDD pin supports -0.3 V to 40 V, enabling direct connection to 12V automotive batteries. In addition, integrated protection mechanisms such as over-voltage and over-temperature safeguards provide robust defense against voltage fluctuations and transient surges, delivering system-level reliability under real-world automotive conditions.　　The NSUC1612 extends its value through broad application compatibility, making it suitable for automotive actuator systems. It supports brushed DC, BLDC, and stepper motors, while integrated communication interfaces—including LIN PHY (compliant with LIN 2.x, ISO 17987, and SAE J2602), FlexCAN, and SPI—allow seamless integration into existing automotive network architectures.　　The NSUC1612 is ideal for a wide range of applications, including thermal management components (e.g., automotive water valves and expansion valves), cabin comfort modules (automotive air-conditioning vent), and smart body systems (active grille shutters and charging port actuators). By integrating these functions into a single device, it helps reduce design costs and simplify development.
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Release time：2025-09-23 13:12 reading：727 Continue reading>>
ROHM has Developed Ultra-Compact CM<span style='color:red'>OS</span> Op Amp: Delivering Industry-Leading* Ultra-Low Circuit Current
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ROHM has Developed Ultra-Compact CMOS Op Amp: Delivering Industry-Leading* Ultra-Low Circuit Current

　　ROHM’s ultra-compact CMOS Operational Amplifier (op amp) TLR1901GXZ achieves the industry’s lowest operating circuit current. This IC is optimized to be applied as a measurement sensing amplifier in size-constrained applications such as handheld measurement instruments, wearable devices, and indoor motion detectors.　　As the demand continues to grow for more sophisticated control in battery-driven devices, the importance of sensors that detect parameters such as temperature, humidity, vibration, pressure, and flow rate – along with the op amps used to amplify these sensor signals – continues to rise. At the same time, greater miniaturization and energy savings in applications is a necessary step to realizing a sustainable society –placing similar demands on individual devices as well.　　In response to these evolving market needs, ROHM has advanced its process, packaging, and proprietary Nano Energy™ circuit technologies to develop an op amp that addresses three key requirements: lower power consumption, higher accuracy, and compact size. The newly developed TLR1901GXZ achieves an ultra-compact footprint of less than 1mm2 by adopting a WLCSP (Wafer Level Chip Scale Package) with a fine ball pitch of 0.35mm while delivering an industry-leading low operating current of 160nA (typ.). This not only contributes to high-density mounting in space-constrained applications, but also to a significantly extended battery life.　　Moreover, the TLR1901GXZ features an exceptionally low input offset voltage of just 0.55mV (max.), one of the best among ultra-low current op amps. This represents an approximate 45% reduction compared to typical products on the market. A maximum input offset voltage temperature drift of 7uV/°C ensures high accuracy operation over the operating temperature range.　　Design flexibility can be further enhanced by pairing the op amp with ROHM’s ultra-compact general-purpose resistors, such as the MCR004 (0402 metric / 01005 inch) and MCR006 (0603 metric / 0201 inch), for applications like gain adjustment. The MCR004 series lineup includes the MCR004E –an environmentally friendly, fully lead-free option designed to support sustainable designs. Adapter boards featuring SSOP5 package ICs are offered as well to support initial evaluation and replacement assessments.　　Going forward, ROHM will continue to pursue further power savings in op amps by advancing both miniaturization and original ultra-low power technologies. At the same time, we are committed to improving device performance by reducing noise and offset, expanding power supply voltage ranges, and contributing to solving social issues through more precise application control.　　Key Product Characteristics　　Application Examples　　• Consumer devices: wearables, smart devices, motion sensors, etc.　　• Industrial equipment: gas detectors, fire alarms, handheld measurement instruments, environmental sensors for IoT, etc.　　Online Sales Information　　Sales Launch Date: Now　　Pricing: $2.1/unit (samples, excluding tax)　　Online Distributors: AMEYA360　　• Applicable Part No: TLR1901GXZ-E2　　• IC-Mounted Adapter Board: TLR1901GXZ-EVK-001　　What is Nano Energy™ Technology?　　Nano Energy™ refers to proprietary ultra-low current consumption technology that achieves a current consumption on the order of nano ampere (nA) by combining advanced analog technologies covering circuit design, layout, and processes utilizing ROHM’s vertically integrated production system.　　This contributes not only to extending operating time of battery operated IoT and mobile devices, but also improving efficiency in industrial and automotive equipment where increased power consumption is problematic.　　https://www.rohm.com/support/nano 　　Nano Energy™ is a trademark or registered trademark of ROHM Co., Ltd.　　Terminology　　WLCSP (Wafer Level Chip Scale Package)　　An ultra-compact package in which terminals and wiring are formed directly on the wafer before separated into individual chips. Unlike general packages where the chips are cut from wafers and then molded with resin to form terminals, WLCSP allows the package size to match the chip itself, making it possible to further reduce size.　　Input Offset Voltage　　The small voltage difference that must be applied between the inverting and non-inverting inputs of the operational amplifier to make the output voltage exactly zero.　　Input Offset Voltage Temperature Drift　　Refers to how much an op amp's input offset voltage changes as the temperature changes.
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Release time：2025-09-12 17:23 reading：573 Continue reading>>
ROHM’s SiC M<span style='color:red'>OS</span>FETs Adopted in Schaeffler’s Inverter Brick, Now in Mass Production
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ROHM’s SiC MOSFETs Adopted in Schaeffler’s Inverter Brick, Now in Mass Production

　　ROHM and Schaeffler, a leading German automotive supplier, have started mass production of a new high-voltage inverter brick equipped with ROHM’s SiC (silicon carbide) MOSFET bare chips as part of their strategic partnership. The inverter brick is intended for a major Chinese car manufacturer.High voltage inverter brickSiC MOS Wafer　　The Schaeffler inverter subassembly is the essential power device building block (brick) to control the electric drive via logic signals. This is where the high-frequency current pulses are produced that set the vehicle’s electric motor in motion. The performance characteristics of the inverter brick now being produced are impressive: Schaeffler increased the output of the brick by increasing the maximum possible battery voltage to much more than the usual 800 V – and with RMS currents of up to 650 A, which turn the sub-module into a compact power pack.　　“Through our strategic approach of incorporating scalability and modularity into our e-mobility solutions – from individual components to a highly integrated electric axle – we developed the readily integrated inverter brick. Based on our generic platform development, it took us just one year to bring this optimal product for the popular X-in-1 architectures to volume production readiness,” says Thomas Stierle, CEO of the E-Mobility Division at Schaeffler.　　Modularity and scalability as the key to easy integration　　As a core component of an inverter, a brick has to meet strict requirements. The characteristics of the sub-module are indicative of the factors behind the current sales success and start of volume production: ROHM’s silicon carbide (SiC) power semiconductors enable the frame-mounted sub-module with high power density to be compact, efficient, and readily integrated into various inverters through its modular and scalable design. The sub-module incorporates the power module for pulse width modulation (PWM) of the current pulses, the DC link capacitor, a DC link and a cooler. Moreover, the brick has a DC boost function, thanks to which a vehicle with 800 V architecture can also be charged at a 400 V charging station at a charging speed of 800 V.　　“We are glad about the launch of volume production for Schaeffler’s inverter brick with our 4th generation SiC MOSFET,” says Dr. Kazuhide Ino, Member of the Board and Managing Executive Officer at ROHM. “With our SiC technology we are making a substantial contribution to increasing the efficiency and performance of electric cars. Working with Schaeffler as our partner, we are thus fostering innovation and sustainability in the automotive industry,” Dr. Ino adds.　　The strategic partnership of Schaeffler (originally initiated under Vitesco Technologies) with ROHM has existed since 2020 and serves to secure capacity for energy-efficient SiC power semiconductors.Thomas Stierle, CEO E-Mobility Division at Schaeffler (left) and Dr. Kazuhide Ino, Member of the Board and Managing Executive Officer at ROHM　　About Schaeffler Group　　The Schaeffler Group has been driving forward groundbreaking inventions and developments in the field of motion technology for more than 75 years. With innovative technologies, products and services for electric mobility, CO₂-efficient drives, chassis solutions and renewable energies, the company is a reliable partner for making motion more efficient, intelligent and sustainable – over the entire life cycle. Schaeffler describes its comprehensive range of products and services in the mobility ecosystem by means of eight product families, from bearing solutions and linear guidance systems of all kinds to repair and monitoring services. With around 120,000 employees at more than 250 locations in 55 countries, Schaeffler is one of the world’s largest family-owned companies and ranks among Germany’s most innovative companies.
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Release time：2025-09-05 16:57 reading：606 Continue reading>>
Adapting to challenging magnetic environments: MT73xx 3D dual-output Hall latches from NOV<span style='color:red'>OS</span>ENSE enable precise automotive motor control
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Adapting to challenging magnetic environments: MT73xx 3D dual-output Hall latches from NOVOSENSE enable precise automotive motor control

　　The NOVOSENSE MT73xx series dual-output Hall latches, based on 3D Hall technology, support SS (Speed & Speed) or SD (Speed & Direction) dual-channel outputs and complies with Automotive Grade 0 standards. Ideal for motor control systems such as power windows, liftgates, and sunroofs, this product family enhances the accuracy and stability of speed and position detection, optimizing overall in-vehicle comfort.　　In motor control systems, precise detection of speed and direction signals directly influences system response speed and operational stability. Traditional solutions typically rely on a combination of two separate Hall latches, requiring high magnetic ring installation precision. This often leads to issues such as signal phase deviation, poor synchronization, and structural complexity.　　Integrates a 3D Hall sensing structure with inherent orthogonal output characteristics, the MT73xx series can simultaneously deliver dual-channel speed signals (SS output) with a 90° phase difference or speed and direction signals (SD output), making it widely suitable for “speed-direction” detection applications. This design reduces dependency on precise positioning of magnetic poles, mitigates dual-channel phase deviation, simplifies system architecture, and improves overall system stability, providing a more flexible and reliable solution for motion control detection.　　Compatibility with diverse magnetic ring configurations enabled by VHS technology　　To achieve high-precision 3D sensing, the MT73xx series adopts NOVOSENSE’s proprietary VHS (Vertical Hall Sensor) technology. Through combinations of XY, YZ, and XZ axial sensing, any two axes naturally deliver orthogonal outputs, enhancing signal synchronization.　　Additionally, the MT73xx series offers excellent compatibility with various magnetic ring configurations – whether axial, radial, or irregularly shaped magnets – maintaining robust duty cycle performance. This allows customers to adapt designs flexibly depending on magnetic ring characteristics and installation environments, further reducing development complexity and tuning costs.　　Dual-output design for optimized system integration　　Regarding system integration, the MT73xx’s dual-output capability allows it to replace traditional single- or dual-Hall solutions by directly transmitting SS (Speed & Speed) or SD (Speed & Direction) signals to ECU, minimizing the requirements for peripheral redundant position sensors.　　This approach not only saves PCB space and simplifies structural layouts, but also enhances solution integration, offering greater design flexibility for innovative applications in motor control and intelligent cockpit systems.
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Release time：2025-08-13 15:35 reading：836 Continue reading>>
High-voltage half-bridge driver NSD2622N from NOV<span style='color:red'>OS</span>ENSE: A high-reliability, high-integration solution tailored for E-mode GaN
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High-voltage half-bridge driver NSD2622N from NOVOSENSE: A high-reliability, high-integration solution tailored for E-mode GaN

　　NOVOSENSE has launched NSD2622N, a high-voltage half-bridge driver IC specifically designed for enhancement-mode GaN (E-mode GaN). This chip integrates positive/negative voltage regulation circuits, supports bootstrap supply, and provides high dv/dt immunity and robust driving capability. It significantly simplifies GaN driver circuit design while enhancing system reliability and reducing overall costs.　　Application background　　In recent years, gallium nitride high-electron-mobility transistors (GaN HEMTs) are gaining increasingly widespread adoption in high-voltage, high-power applications, such as AI data center power supplies, microinverters, and on-board chargers (OBCs). With significant advantages of high switching frequency and low switching losses, GaN HEMTs enable substantially improved power density in power supply systems, noticeably optimized energy efficiency, and significantly reduced system costs.　　However, GaN devices still face challenges in real-world applications. For instance, E-mode GaN devices exhibit low turn-on thresholds. In high-voltage and high-power applications, particularly in hard-switching operation mode, poorly designed driver circuits can lead to false triggering due to crosstalk during high-frequency high-speed switching. Additionally, the complexity of compatible driver circuit designs raises the barrier to GaN device adoption.　　To accelerate widespread GaN adoption, leading GaN manufacturers at home and abroad have introduced some power ICs with integrated drivers, especially MOSFET-LIKE GaN power devices in Si-MOSFET-compatible packages, which somewhat reduce GaN driver circuit design complexity. However, driver-integrated GaN solutions have limitations: they struggle to meet customized design requirements and are unsuitable for applications adopting multi-device parallel or bidirectional switching topologies. Therefore, discrete GaN devices with dedicated drivers remain essential for many applications. To address the above-mentioned limitations, NOVOSENSE has developed NSD2622N – a driver IC tailored to E-mode GaN, aiming to deliver high-performance, high-reliability, and cost-competitive driving solutions for high-voltage and high-power GaN applications.　　Product features　　NSD2622N is a high-voltage half-bridge driver IC specifically designed for E-mode GaN. It integrates a voltage regulation circuit capable of generating a configurable stable positive voltage from 5V to 6.5V to ensure reliable GaN driving, as well as a charge pump circuit that produces a fixed -2.5V negative voltage for reliable GaN turn-off. By integrating both positive and negative voltage regulation circuits, the chip supports high-side output with bootstrap supply.　　NSD2622N leverages NOVOSENSE’s proven capacitive isolation technology. Its high-side driver withstands a voltage range of -700V to +700V and a minimum SW dv/dt immunity of 200V/ns. Meanwhile, low propagation delay and tight delay matching between high-side and low-side outputs make it a perfect match for the high-frequency, high-speed switching requirements of GaN devices. Additionally, NSD2622N delivers 2A (source) and -4A (sink) peak drive currents on both high-side and low-side outputs, meeting the requirements of high-speed GaN driving and multi-device parallel configurations. The IC also includes an integrated 5V LDO that can power circuits like digital isolators in applications requiring isolation.　　Key specifications of NSD2622N　　SW voltage range: -700V to 700V　　SW dv/dt immunity: > 200V/ns　　Wide supply voltage range: 5V-15V　　Adjustable positive output voltage range: 5V-6.5V　　Built-in negative output voltage: -2.5V　　Peak drive current: 2A (source) / 4A (sink)　　Minimum input pulse width (typical): 10ns　　Input-to-output propagation delay (typical): 38ns　　Pulse width distortion (typical): 5ns　　Rise time (1nF load, typical): 6.5ns　　Fall time (1nF load, typical): 6.5ns　　Built-in dead time (typical): 20ns　　Bootstrap supply for high-side output　　Integrated 5V LDO for digital isolator supply　　Undervoltage lockout (UVLO) and overtemperature protection　　Operating temperature range: -40°C to +125°CFunctional block diagram of NSD2622N　　Eliminating false triggering risks and providing more stable drive voltage　　Compared to conventional Si MOSFET driver solutions, the key challenge in E-mode GaN driver circuit design lies in providing appropriate, stable and reliable positive/negative bias voltages. This is because that E-mode GaN typically requires a 5V-6V turn-on voltage, while its threshold voltage is as low as 1V, or even lower at high temperatures, necessitating negative turn-off voltage to prevent false triggering. To address this challenge, two common drive solutions are used for E-mode GaN: resistive-capacitive (RC) voltage division drive and direct drive.　　1. RC voltage division drive　　This approach utilizes standard Si MOSFET driver ICs. As shown in the diagram, during turn-on, the parallel combination of Cc and Ra is connected with Rb in series, dividing the driver supply voltage (e.g., 10V) to provide a 6V gate drive voltage for the GaN device, with Dz1 clamping the positive voltage. During turn-off, Cc discharges to provide negative turn-off voltage for the GaN device, with Dz2 clamping the negative voltage.RC voltage division drive solution　　Although the RC voltage division circuit does not require sophisticated driver ICs, it introduces additional parasitic inductance due to a large number of components involved, which can impact GaN’s switching performance at high frequencies. Moreover, since the negative turn-off voltage relies on discharge from capacitor Cc, the negative turn-off voltage proves unreliable.　　As shown in the half-bridge demo board test waveforms, during the startup phase (T1 in the waveform), the absence of initial charge on Cc results in failure to establish negative voltage and thus zero-voltage turn-off; during the negative turn-off period following the driver’s signal transmission (T2), the negative voltage amplitude fluctuates with capacitor discharge; and during the prolonged turn-off period (T3), the capacitor cannot sustain negative voltage, eventually discharging to zero. Consequently, RC voltage division circuits are generally limited to medium/low power applications with relatively lower reliability requirements, and are proved unsuitable for high-power systems.Waveform of E-mode GaN using RC voltage division drive circuit(CH2: Drive supply voltage; CH3: GaN gate-source voltage)　　2. Direct drive　　The direct drive solution requires selecting a driver IC with an appropriate undervoltage-lockout (UVLO) threshold, for example, NSI6602VD, which is specifically designed for E-mode GaN with a 4V UVLO threshold. When paired with an external positive/negative voltage regulation circuit, it can directly drive E-mode GaN devices. Below is a typical application circuit.NSI6602VD driver circuitPositive and negative voltage regulation circuits　　This direct drive solution can provide reliable negative turn-off voltage for GaN under all operating conditions, when the auxiliary power supply is functioning normally. As a result, this approach is widely adopted in various high-voltage, high-power GaN applications.　　The next-generation GaN driver NSD2622N from NOVOSENSE, integrates the positive/negative voltage regulation circuits directly into the chip. As shown in the half-bridge demo board test waveforms below, NSD2622N maintains consistent negative turn-off voltage amplitude and duration regardless of operating conditions. Specifically, during startup (T1 in the waveform), the negative voltage is established even before the driver sends signals; during GaN turn-off (T2), the negative voltage remains stable in amplitude; during extended periods without driver signals (T3), the negative voltage continues to stay reliably stable.Waveforms of E-mode GaN using NSD2622N driver circuit(CH2: Low-side GaN Vds, CH3: Low-side GaN Vgs)　　Simplified circuit design and reduced system costs　　NSD2622N can provide stable and reliable direct drive for GaN devices. More importantly, by integrating positive/negative voltage regulators, it significantly reduces external component count. By adopting the bootstrap supply architecture, NSD2622N greatly simplifies driver power circuit design and lowers overall system costs.　　Taking a 3kW power supply unit (PSU) as an example, assuming both phases of the interleaved TTP PFC and full-bridge LLC use GaN devices, a complexity comparison between two direct-drive solutions is given below:　　When using the NSI6602VD driver solution, each half-bridge high-side driver requires an independent isolated power supply in conjunction with corresponding isolation and positive/negative voltage regulation circuits. This means complex auxiliary power supply design for isolation. Given the high power quality requirements of GaN driving and the fact that the main power paths of the PFC and LLC stages are typically placed on separate boards, a two-stage auxiliary power architecture is often necessary. In this configuration, the first stage typically employs a device with wide input voltage range like flyback converter, to generate regulated voltage rails. The second stage may use an open-loop full-bridge topology to provide isolated power and further regulate the power to generate the required positive and negative supply voltages for NSI6602VD. Below is a typical power architecture for such a driver solution.Typical power architecture for NSI6602VD driver solution　　The NSD2622N driver solution significantly simplifies auxiliary power design through its bootstrap supply capability. Below is a typical power architecture for this approach.Typical power architecture for NSD2622N driver solution　　A detailed comparison of bill-of-materials (BOM) for driver and power supply circuits between the above-mentioned two GaN direct-drive solutions is provided in the table below. It can be seen that the NSD2622N solution utilizing bootstrap supply, dramatically reduces total component count compared to the NSI6602VD’s isolated power supply approach, resulting in substantially lower system costs. Even in applications requiring isolated power supply, NSD2622N maintains its competitive edge - its integrated positive/negative voltage regulators enable a more simplified peripheral circuit relative to the NSI6602VD solution, leading to fewer components and lower system costs.BOM comparison between two GaN direct drive solutions　　Versatile GaN compatibility and flexible drive voltage adjustment　　The E-mode GaN driver IC NSD2622N from NOVOSENSE delivers not only superior performance but also broad compatibility across various GaN devices from different brands, of different types (including both voltage-mode and current-mode), and at different voltage ratings. For instance, the output voltage of NSD2622N can be set between 5V to 6.5V by adjusting feedback resistors. This enables selection of the most appropriate driving voltage for any GaN device by simply adjusting the feedback resistors to match specific GaN characteristics, allowing GaN devices from different brands to operate at their individual peak performance points.　　In addition, NSD2622N features a minimum dv/dt immunity of 200V/ns on the switching node (SW), enhancing the upper limit of GaN switching speed. The adoption of a more compact QFN package and the design of independent turn-on and turn-off output pins further reduce the driver loop parasitic inductance. The over-temperature protection ensures safer GaN applications.　　NOVOSENSE also offers single-channel GaN driver IC NSD2012N. Featuring 3mm*3mm QFN package and adjustable negative voltage capability, it can meet more personalized application requirements.
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Release time：2025-08-07 14:08 reading：887 Continue reading>>
NOV<span style='color:red'>OS</span>ENSE Launches High-Performance 2-Wire Hall Switch MT72xx Series: Compact Design with System-Level Reliability
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NOVOSENSE Launches High-Performance 2-Wire Hall Switch MT72xx Series: Compact Design with System-Level Reliability

　　NOVOSENSE Microelectronics ("NOVOSENSE") has launched the MT72xx series, 2-wire current output Hall switches. The switches feature superior EMC performance, multiple sensing polarity options, and highly integrated design, achieving ASIL-A functional safety certification and full compliance with AEC-Q100 Grade 0 standards. Designed for long-wiring scenarios in vehicle body electronics and domain controller systems, the MT72xx series provides optimized solutions for seatbelt buckle detection, window lift motor control, and other automotive applications.　　Addressing Long Wiring Harness Challenges in Automotive　　With rapid advancement of automotive intelligence and electrification, increasingly complex vehicle body functions and highly integrated domain controllers have significantly extended wiring harnesses between sensors and control units. This introduces critical challenges including elevated signal interference risks, increased costs, and compromised system reliability.　　NOVOSENSE's MT72xx series delivers robust signal integrity while effectively reducing wiring complexity and lowering harness costs. Designed for long-wiring scenarios such as door lock detection, anti-pinch window control, power tailgate position sensing, seat adjustment, and seatbelt buckle detection, these devices provide stable current output with superior anti-interference capabilities, maintaining signal reliability even in extended wiring conditions.　　High Integration & Robustness for Automotive-Grade Standards　　Engineered for harsh automotive environments with strong EMI interference, the MT72xx series integrates a 100nF(only TO92S package)capacitor to enhance EMC/ESD performance, simplify peripheral configuration, and optimize BOM space, enabling flexible system architecture design. Compliant with AEC-Q100 Grade 0, the devices ensure long-term stability under extreme high-temperature conditions.　　Featuring multiple sensing polarity options (unipolar, omnipolar, latch) and adjustable sensitivity thresholds, the MT72xx series offers design flexibility to accommodate diverse magnet solutions and vehicle architectures, streamlining development and debugging processes.　　Comprehensive Resources to Accelerate Time-to-Market　　To expedite customer development, NOVOSENSEN provides dedicated MT72xx demo boards and magnetic simulation services. These resources enable rapid device validation, magnet solution matching, and cost-effective debugging, significantly shortening product deployment cycles.
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Release time：2025-07-14 14:25 reading：838 Continue reading>>
GigaDevice GD32C231 Series MCU — Redefining Cost-Performance, Unleashing New Potential
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GigaDevice GD32C231 Series MCU — Redefining Cost-Performance, Unleashing New Potential

　　GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, today officially launched the value-packed GD32C231 series of entry-level microcontrollers, further expanding its Arm® Cortex®-M23 core product lineup. As the leader in China's largest Arm® MCU market, GigaDevice positions the GD32C231 series as a "high-performance entry-level" solution designed to offer more competitive options for applications including small home appliances, BMS (Battery Management Systems), small-screen display devices, handheld consumer products, industrial auxiliary controls, and automotive aftermarket systems.　　With over 2 billion cumulative MCU shipments and a mature supply chain, GigaDevice's newly launched GD32C231 series overcomes the performance limitations of traditional entry-level chips through innovative design. The series not only integrates a rich set of peripherals but also adopts an industrial-grade wide-voltage process and offers a comprehensive ecosystem. While maintaining exceptional cost-effectiveness, this affordable MCU supports more complex application scenarios, redefining value standards in the entry-level MCU market and ushering in a new era of "affordable yet high-spec" solutions.　　GD32C231 Series MCUs: The Ultimate Choice for Cost-Effectiveness　　The GD32C231 series MCUs deliver a significant upgrade in computing performance and peripheral features while maintaining excellent price competitiveness, achieving an ultra-high cost-performance balance. Built on Arm's advanced Cortex®-M23 core architecture, the series offers up to 10% higher performance than Cortex®-M0+, with clock speeds reaching 48MHz. It supports efficient processing capabilities such as integer division, greatly enhancing software execution efficiency.　　In terms of memory configuration, the series features 32KB to 64KB of highly reliable embedded Flash and 12KB of low-power SRAM, with full memory areas equipped with ECC error correction. To meet the demands of diverse applications, multiple package options are available, including TSSOP20/LGA20, QFN28, LQFP32/QFN32, and LQFP48/QFN48. Thanks to its highly integrated chip design, the series effectively reduces the number of external components, providing users with a bill-of-materials (BOM) cost-optimized solution.　　The Perfect Balance of Wide Voltage Support, Low Power, and Fast Wake-up Time　　The GD32C231 series delivers exceptional power flexibility and energy efficiency, supporting a wide operating voltage range from 1.8V to 5.5V and a broad temperature range from -40°C to 105°C. This makes it highly adaptable for deployment in harsh and demanding environments. Featuring multiple power management modes, the device consumes as little as 5μA in deep sleep mode and offers ultra-fast 2.6μs wake-up time - achieving an optimal balance between low power consumption and real-time performance. These capabilities make the GD32C231 ideal for battery-powered and portable applications.　　Reliable Operation for Safety-Critical Applications　　Engineered for reliability, the GD32C231 provides robust ESD protection - meeting 8kV contact discharge and 15kV air discharge standards. Full ECC error correction is applied across Flash and SRAM memory, helping to prevent data corruption. An integrated hardware CRC module further enhances data transmission integrity. These features ensure the MCU performs reliably in safety-critical environments such as industrial automation and automotive electronics.　　Highly Integrated Peripherals for Flexible Design　　The GD32C231 series integrates a comprehensive set of peripherals, significantly enhancing system integration and design flexibility:　　A 12-bit ADC with 13 external channels and 2 internal comparators for precise analog signal measurement.　　Up to 4 general-purpose 16-bit timers and 1 advanced 16-bit timer for versatile time-based operations.　　2 high-speed SPI interfaces (including quad QSPI at 24Mbps), 2 I²C interfaces (supporting Fast Mode+ at 1Mbit/s), and 3 UARTs (up to 6Mbps) for robust serial communication.　　An integrated 3-channel DMA controller and 1 I²S interface for efficient peripheral data handling.　　With support for up to 45 GPIOs in a 48-pin package, the GD32C231 offers excellent expandability for complex designs. These rich peripheral resources empower the MCU to meet the demands of a wide range of applications - from consumer electronics to industrial control systems - with ease and reliability.　　Full-Stack Ecosystem Support for Efficient Development　　The GD32C231 series is backed by a comprehensive development ecosystem designed to accelerate product design and time-to-market. Standard software libraries and resources are readily available on GigaDevice's official website.　　To support developers throughout the entire development cycle, GigaDevice provides extensive documentation, including datasheets, user manuals, hardware design guidelines, application notes, and porting references - enabling rapid onboarding for both hardware and software development. A complete SDK firmware package is also offered, featuring rich sample code and development board resources that cover everything from low-level drivers to advanced applications.　　The GD32 MCU family natively supports FreeRTOS, offering developers a lightweight, open-source, and high-efficiency real-time operating system. To streamline development even further, GigaDevice offers the GD32 Embedded Builder IDE - its proprietary development environment that integrates graphical configuration and intelligent code generation, reducing design complexity. The GD32 All-In-One Programmer supports essential Flash operations such as programming, erasing, reading, and option byte configuration. Meanwhile, the GD-Link debugger provides dual-mode SWD/JTAG support with plug-and-play functionality for a seamless debugging experience. GigaDevice also collaborates closely with third-party programming tool providers to offer customers a wide range of programming and debugging options.　　Additionally, the GD32C231 series is fully compatible with major international toolchains including Arm® Keil, IAR Embedded Workbench, and SEGGER Embedded Studio, ensuring flexibility across various development platforms. For typical use cases, GigaDevice provides robust application solutions and reference designs - helping developers shorten design cycles, simplify product validation, and accelerate the path to mass production.
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Release time：2025-07-10 14:22 reading：873 Continue reading>>

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